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2SB1669-S Datasheet(PDF) 2 Page - NEC |
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2SB1669-S Datasheet(HTML) 2 Page - NEC |
2 / 6 page Data Sheet D15410EJ2V0DS 2 2SB1669 ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −60 V, IE = 0 A −10 µA hFE1 VCE = −5.0 V, IC = −0.5 ANote 100 400 − DC current gain hFE2 VCE = −5 V, IC = −3 ANote 20 − Collector saturation voltage VCE(sat) IC = −3.0 A, IB = −300 mANote −1.0 V Base saturation voltage VBE(sat) IC = −3.0 A, IB = −300 mANote −2.0 V Gain bandwidth product fT VCE = −5.0 V, IC = −0.5 A 5 MHz Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 10 MHz 80 pF Turn-on time ton 0.4 µs Storage time tstg 1.7 µs Fall time tf IC = −2.0 A, RL = 15 Ω, IB1 = −IB2 = −200 mA, VCC ≅ −30 V Refer to the test circuit. 0.5 µs Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform |
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