HMPP-389T-TR1 datasheet(5/11 Pages) HP

Part #	HMPP-389T-TR1

Description	MiniPak Surface Mount RF PIN Switch Diodes

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Manufacturer	HP [Agilent(Hewlett-Packard)]

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5

measure of the time it takes for the

charge stored in the I layer to

decay, when forward bias is

replaced with reverse bias, to some

predetermined value. This lifetime

can be short (35 to 200 nsec. for

epitaxial diodes) or it can be

relatively long (400 to 3000 nsec.

for bulk diodes). Lifetime has a

strong influence over a number of

PIN diode parameters, among

which are distortion and basic

diode behavior.

To study the effect of lifetime on

diode behavior, we first define a

cutoff frequency f

C = 1/τ. For short

lifetime diodes, this cutoff fre-

quency can be as high as 30 MHz

while for our longer lifetime

diodes f

C ≅ 400 KHz. At frequen-

cies which are ten times f

C (or

more), a PIN diode does indeed

act like a current controlled

variable resistor. At frequencies

which are one tenth (or less) of f

C,

a PIN diode acts like an ordinary

PN junction diode. Finally, at

0.1f

C ≤ f ≤ 10fC, the behavior of the

diode is very complex. Suffice it to

mention that in this frequency

range, the diode can exhibit very

strong capacitive or inductive

reactance — it will not behave at

all like a resistor. However, at zero

bias or under heavy forward bias,

all PIN diodes demonstrate very

high or very low impedance

(respectively) no matter what

their lifetime is.

Diode Resistance vs. Forward Bias

If we look at the typical curves for

resistance vs. forward current for

bulk and epi diodes (see Figure

10), we see that they are very

different. Of course, these curves

apply only at frequencies > 10 f

C.

One can see that the curve of

resistance vs. bias current for the

bulk diode is much higher than

that for the epi (switching) diode.

Figure 11. Linear Equivalent Circuit of the

MiniPak PIN Diode.

Thus, for a given current and

junction capacitance, the epi

diode will always have a lower

resistance than the bulk diode.

The thin epi diode, with its

physically small I region, can

easily be saturated (taken to the

point of minimum resistance) with

very little current compared to the

much larger bulk diode. While an

epi diode is well saturated at

currents around 10 mA, the bulk

diode may require upwards of

100 mA or more. Moreover, epi

diodes can achieve reasonable

values of resistance at currents of

1 mA or less, making them ideal

for battery operated applications.

Having compared the two basic

types of PIN diode, we will now

focus on the HMPP-3890 epi

diode.

Given a thin epitaxial I region, the

diode designer can trade off the

device’s total resistance (R

S + Rj)

and junction capacitance (C

j) by

varying the diameter of the

contact and I region. The

HMPP-3890 was designed with the

930 MHz cellular and RFID, the

1.8 GHz PCS and 2.45 GHz RFID

markets in mind. Combining the

low resistance shown in Figure 10

with a typical total capacitance of

0.27 pF, it forms the basis for high

performance, low cost switching

networks.

1000

100

10

1

BIAS CURRENT (mA)

0.01

0.1

1

10

100

HMPP-389x

Epi PIN Diode

HSMP-3880 Bulk PIN Diode

Figure 10. Resistance vs, Forward Bias.

Linear Equivalent Circuit

In order to predict the perfor-

mance of the HMPP-3890 as a

switch, it is necessary to construct

a model which can then be used in

one of the several linear analysis

programs presently on the market.

Such a model is given in Figure 11,

where R

S + Rj is given in Figure 1

and C

j is provided in Figure 2.

Careful examination of Figure 11

will reveal the fact that the

package parasitics (inductance

and capacitance) are much lower

for the MiniPak than they are for

leaded plastic packages such as

the SOT-23, SOT-323 or others.

This will permit the HMPP-389x

family to be used at higher fre-

quencies than its conventional

leaded counterparts.

30 fF

20 fF

1.1 nH

Single diode package (HMPP-3890)

2

3

1

4

30 fF

20 fF

12 fF

0.5 nH

Anti-parallel diode package (HMPP-3892)

2

3

1

4

0.5 nH

0.05 nH

0.5 nH

0.05 nH

0.5 nH

0.05 nH

30 fF

20 fF

0.5 nH

0.05 nH

Parallel diode package (HMPP-3895)

2

3

1

4

0.5 nH

0.05 nH

0.5 nH

0.05 nH

0.5 nH

0.05 nH

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HMPP-389T-TR1 Datasheet(PDF) 5 Page - Agilent(Hewlett-Packard)

HMPP-389T-TR1 Datasheet(HTML) 5 Page - Agilent(Hewlett-Packard)

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