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BP1L2Q Datasheet(PDF) 2 Page - NEC |
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BP1L2Q Datasheet(HTML) 2 Page - NEC |
2 / 6 page Data Sheet D11740EJ2V0DS 2 BP1 SERIES ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base volgate VCBO −25 V Colletor to emitter voltage VCEO −25 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −0.7 A Collector current (Pulse) IC(pulse) Note 1 −1.0 A Base current (DC) IB(DC) −0.02 A Total power dissipation PT 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note 1 PW ≤ 10 ms, duty cycle ≤ 50 % BP1A4A ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −22 V, IE = 0 −100 nA DC current gain hFE1 Note 2 VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 Note 2 VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 Note 2 VCE = −2.0 V, IC = −0.7 A 50 − Collector saturation voltage VCE(sat) Note 2 IC = −0.3 A, IB = −6 mA −0.28 −0.4 V Low level input voltage VIL Note 2 VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 −− − Ω E-to-B resistance R2 710 13 k Ω Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −22 V, IE = 0 −100 nA DC current gain hFE1 Note 2 VCE = −2.0 V, IC = −0.1 A 150 350 − DC current gain hFE2 Note 2 VCE = −2.0 V, IC = −0.5 A 100 300 − DC current gain hFE3 Note 2 VCE = −2.0 V, IC = −0.7 A 50 200 − Low level output voltage VOL Note 2 VIN = −5.0 V, IC = −0.3 A −0.30 −0.4 V Low level input voltage VIL Note 2 VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 k Ω Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % |
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