BB1A4M datasheet(4/6 Pages) NEC

Part #	BB1A4M

Description	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

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Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Data Sheet D11739EJ2V0DS

4

BB1 SERIES

BB1L3N

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 30 V, IE = 0

100

nA

DC current gain

hFE1

Note 2

VCE = 2.0 V, IC = 0.1 A

300

−

DC current gain

hFE2

Note 2

VCE = 2.0 V, IC = 0.5 A

300

−

DC current gain

hFE3

Note 2

VCE = 2.0 V, IC = 0.7 A

135

−

Low level output voltage

VOL

Note 2

VIN = 5.0 V, IC = 0.2 A

0.3

V

Low level input voltage

VIL

Note 2

VCE = 5.0 V, IC = 100

µA

0.3

V

Input resistance

R1

3.29

4.7

6.11

k

Ω

E-to-B resistance

R2

710

13

k

Ω

Note 2 PW

≤ 350

µs, duty cycle ≤ 2 %

BB1A4M

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 30 V, IE = 0

100

nA

DC current gain

hFE1

Note 2

VCE = 2.0 V, IC = 0.1 A

300

−

DC current gain

hFE2

Note 2

VCE = 2.0 V, IC = 0.5 A

300

−

DC current gain

hFE3

Note 2

VCE = 2.0 V, IC = 0.7 A

135

−

Collector saturation voltage

VOL

Note 2

VIN = 5.0 V, IC = 0.2 A

0.3

V

Low level input voltage

VIL

Note 2

VCE = 5.0 V, IC = 100

µA

0.3

V

Input resistance

R1

710

13

k

Ω

E-to-B resistance

R2

710

13

k

Ω

Note 2 PW

≤ 350

µs, duty cycle ≤ 2 %

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