BUF636A datasheet(2/8 Pages) TEMIC

Part #	BUF636A

Description	Silicon NPN High Voltage Switching Transistor

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Manufacturer	TEMIC [TEMIC Semiconductors]

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BUF636A

TELEFUNKEN Semiconductors

Rev. A2, 26-Sep-97

2 (8)

Electrical Characteristics

Tcase = 25°C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Collector cut-off current

VCES = 1000 V

ICES

50

mA

VCES = 1000 V; Tcase = 150

°C

ICES

0.5

mA

Collector-emitter breakdown

voltage (figure 1)

IC = 300 mA; L = 125 mH;

Imeasure = 100 mA

V(BR)CEO

450

V

Emitter-base breakdown voltage

IE = 1 mA

V(BR)EBO

11

V

Collector-emitter saturation

IC = 0.8 A; IB = 0.2 A

VCEsat

0.1

0.2

V

voltage

IC = 2.5 A; IB = 0.8 A

VCEsat

0.2

0.4

V

Base-emitter saturation voltage

IC = 0.8 A; IB = 0.2 A

VBEsat

0.9

1

V

g

IC = 2.5 A; IB = 0.8 A

VBEsat

1

1.2

V

DC forward current transfer ratio

VCE = 1 V; IC = 2 A

hFE

6

VCE = 2 V; IC = 0.8 A

hFE

15

21

VCE = 2 V; IC = 0.8 A

hFE

15

21

VCE = 2 V; IC = 2.5 A

hFE

7

10

VCE = 5 V; IC = 5 A

hFE

4

6

Collector-emitter working voltage

VS = 50 V; L = 1 mH; IC = 5 A;

IB1 = 1.7 A; –IB2 = 0.5 A;

–VBB = 5 V

VCEW

550

V

Dynamic saturation voltage

IC = 2.5 A; IB = 0.5 A, t = 1

ms

VCEsatdyn

10

15

V

yg

IC = 2.5 A; IB = 0.5 A, t = 3

ms

VCEsatdyn

2.8

5

V

Gain bandwidth product

IC = 200 mA; VCE = 10 V;

f = 1 MHz

fT

4

MHz

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