HY57V161610ET-7I datasheet(5/13 Pages) HYNIX

Part #	HY57V161610ET-7I

Description	2 Banks x 512K x 16 Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V161610ET-I

Rev. 0.1 / Nov. 2003

5

CAPACITANCE (TA=25°C, f=1MHz)

OUTPUT LOAD CIRCUIT

DC CHARACTERISTICS I (TA=-40°C to 85°C)

Note :

1.VDD(min) is 3.15V when HY57V161610ET-7I operates at CAS latency=2 and tCK2=8.9ns.

2.VDD(min) of HY57V161610ET-5I/55I is 3.15V

3.VIN = 0 to 3.6V, All other pins are not under test = 0V

4.DOUT is disabled, VOUT=0 to 3.6V

Parameter

Symbol

Min

Max

Unit

Input capacitance

CLK

CI1

2.5

4

pF

A0 ~ A10, BA

CKE, CS, RAS, CAS, WE, UDQM, LDQM

CI2

2.5

5

pF

Data input / output capacitance

DQ0 ~ DQ15

CI/O

46.5

pF

Parameter

Symbol

Min.

Max

Unit

Note

Power Supply Voltage

VDD

3.0

3.6

V

1, 2

Input leakage current

IL

-1

1

uA

3

Output leakage current

IO

-1

1

uA

4

Output high voltage

VOH

2.4

-

V

IOH = -4mA

Output low voltage

VOL

-0.4

V

IOL =+4mA

Vtt=1.4V

RT=250

Ω

30pF

Output

DC Output Load Circuit

30pF

Output

AC Output Load Circuit

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