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CAT5111Z-50TSSOP Datasheet(PDF) 3 Page - Catalyst Semiconductor |
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CAT5111Z-50TSSOP Datasheet(HTML) 3 Page - Catalyst Semiconductor |
3 / 9 page 3 Doc. No. 2009, Rev. R CAT5113 OPERATION MODES ABSOLUTE MAXIMUM RATINGS Supply Voltage VCC to GND ...................................... –0.5V to +7V Inputs CS to GND .............................–0.5V to VCC +0.5V INC to GND ............................–0.5V to VCC +0.5V U/ D to GND ............................–0.5V to VCC +0.5V H to GND ................................ –0.5V to VCC +0.5V L to GND ................................ –0.5V to VCC +0.5V W to GND ............................... –0.5V to VCC +0.5V Operating Ambient Temperature Commercial (‘C’ or Blank suffix) ...... 0 °C to +70°C Industrial (‘I’ suffix) ...................... – 40 °C to +85°C Junction Temperature ..................................... +150 °C Storage Temperature ....................... –65 °C to +150°C Lead Soldering (10 sec max) .......................... +300 °C * Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Absolute Maximum Ratings are limited values applied individually while other parameters are within specified operating conditions, and functional operation at any of these conditions is NOT implied. Device performance and reliability may be impaired by exposure to absolute rating conditions for extended periods of time. NOTES: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V (3) IW=source or sink (4) These parameters are periodically sampled and are not 100% tested. RL CL CH RH CW RWB Rwi Potentiometer Equivalent Circuit INC CS U/D Operation High to Low Low High Wiper toward H High to Low Low Low Wiper toward L High Low to High X Store Wiper Position Low Low to High X No Store, Return to Standby X High X Standby RELIABILITY CHARACTERISTICS Symbol Parameter Test Method Min Typ Max Units VZAP(1) ESD Susceptibility MIL-STD-883, Test Method 3015 2000 Volts ILTH(1)(2) Latch-Up JEDEC Standard 17 100 mA TDR Data Retention MIL-STD-883, Test Method 1008 100 Years NEND Endurance MIL-STD-883, Test Method 1003 1,000,000 Stores Power Supply Symbol Parameter Conditions Min Typ Max Units VCC Operating Voltage Range 2.5 6.0 V ICC1 Supply Current (Increment) VCC = 6V, f = 1MHz, IW=0 100 µA VCC = 6V, f = 250kHz, IW=0 50 ICC2 Supply Current (Write) Programming, VCC = 6V 1 mA VCC = 3V 500 µA ISB1 (2) Supply Current (Standby) CS=VCC-0.3V 0.01 1 µA U/D, INC=VCC-0.3V or GND DC Electrical Characteristics: VCC = +2.5V to +6.0V unless otherwise specified Symbol Parameter Conditions Min Typ Max Units IIH Input Leakage Current VIN = VCC 10 µA IIL Input Leakage Current VIN = 0V –10 µA VIH1 TTL High Level Input Voltage 4.5V ≤ VCC ≤ 5.5V 2 VCC V VIL1 TTL Low Level Input Voltage 0 0.8 V VIH2 CMOS High Level Input Voltage 2.5V ≤ VCC ≤ 6V VCC x 0.7 VCC + 0.3 V VIL2 CMOS Low Level Input Voltage -0.3 VCC x 0.2 V Logic Inputs |
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