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Si 50 22 /Si 5 0 2 3
10
Preliminary Rev. 0.46
Figure 5. Si5022/23 Typical Application Circuit
Table 5. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
DC Supply Voltage
VDD
–0.5 to 2.8 (Si5022)
–0.5 to 3.5 (Si5023)
V
LVTTL Input Voltage
VDIG
–0.3 to 3.6
V
Differential Input Voltages
VDIF
–0.3 to (VDD+ 0.3)
V
Maximum Current any output PIN
±50
mA
Operating Junction Temperature
TJCT
–55 to 150
°C
Storage Temperature Range
TSTG
–55 to 150
°C
Lead Temperature (soldering 10 seconds)
300
°C
ESD HBM Tolerance (100 pf, 1.5 k
Ω)1
kV
Note: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 6. Thermal Characteristics
Parameter
Symbol
Test Condition
Value
Unit
Thermal Resistance Junction to Ambient
ϕ
JA
Still Air
38
°C/W
REFCLK+
REFCLK–
DIN+
DIN–
High Speed
Serial Input
System
Reference
Clock
CLKOUT+
CLKOUT–
DOUT+
DOUT–
0.1
µ
µµ
µF
Recovered
Data
Recovered
Clock
LVTTL
Control Inputs
2
Si5022/23
2200 pF
20 pF
10 k
Ω
Ω
Ω
Ω
VDD
Loss-of-Lock
Indicator
Loss-of-Signal
Indicator
BER Alarm
Indicator
Data Slice
Level Set
Bit Error Rate
Level Set
Loss-of-Signal
Level Set
(Optional)
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