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BUK7908-40AIE Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7908-40AIE Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page Philips Semiconductors BUK71/7908-40AIE TrenchPLUS standard level FET Product data Rev. 02 — 24 October 2003 6 of 16 9397 750 12086 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Ld internal drain inductance measured from upper edge of drain mounting base to center of die - 2.5 - nH Ls internal source inductance measured from source lead to source bond pad; lead length 6 mm - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS =0V; Figure 17 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = −100 A/µs VGS = −10 V; VDS =30V -55 - ns Qr recovered charge - 30 - nC Table 5: Characteristics…continued Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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