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IS62LV2568LL Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part No. IS62LV2568LL
Description  256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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IS62LV2568LL
ISSI®
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. B
05/03/00
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
-85
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
70
85
ns
tAA
Address Access Time
70
85
ns
tOHA
Output Hold Time
10
15
ns
tACE1
CE1 Access Time
70
85
ns
tACE2
CE2 Access Time
70
85
ns
tDOE
OE Access Time
35
45
ns
tHZOE(2)
OE to High-Z Output
25
25
ns
tLZOE(2)
OE to Low-Z Output
5
5
ns
tLZCE1(2)
CE1 to Low-Z Output
10
10
ns
tLZCE2(2)
CE2 to Low-Z Output
10
10
ns
tHZCE(2)
CE1 or CE2 to High-Z Output
0
25
0
25
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Times
5 ns
Input and Output Timing
1.3V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
3070
5 pF
Including
jig and
scope
3150
OUTPUT
2.8V
3070
30 pF
Including
jig and
scope
3150
OUTPUT
2.8V
Figure 1
Figure 2




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