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IS62LV2568LL Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS62LV2568LL
Description  256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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 4 page
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IS62LV2568LL
ISSI®
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
-85
Symbol Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
ICC
Vcc Dynamic
VCC = Max., CE = VIL
Com.
30
25
mA
Operating
IOUT = 0 mA, f = fMAX
Ind.
35
30
Supply Current
ISB1
TTL Standby
VCC = Max.,
Com.
0.4
0.4
mA
Current
VIN = VIH or VIL,
Ind.
1.0
1.0
(TTL Inputs)
CE1
≥ VIH or CE2 ≤ VIL, f = 0
ISB2
CMOS Standby
VCC = Max., f = 0
Com.
5
5µA
Current
CE1
≥ VCC – 0.2V,
Ind.
5
5
(CMOS Inputs)
CE2
≤ 0.2V,
or VIN
≥ VCC – 0.2V, VIN ≤ 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –1.0 mA
2.0
V
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.4
V
ILI
Input Leakage
GND
≤ VIN ≤ VCC
–11
µA
ILO
Output Leakage
GND
≤ VOUT ≤ VCC
–11
µA
Note:
1. VIL = –3.0V for pulse width less than 10 ns.




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