9397 750 13275

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 02 — 22 July 2004

3 of 12

Philips Semiconductors

BLA0912-250

Avionics LDMOS transistor

6.

Characteristics

7.

Application information

Table 6:

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

voltage

75

-

-

V

gate-source threshold

voltage

4

-

5

V

drain-source leakage

current

-

-

1

µA

on-state drain current

45

-

-

A

gate-source leakage

current

-

-

1

µA

forward

transconductance

-

9

-

S

drain-source on-state

resistance

-

60

-

m

Ω

Table 7:

Application information

otherwise.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

36

V

f

frequency

960

-

1215

MHz

load power

250

-

W

power gain

12

13

dB

drain efficiency

40

50

%

thermal impedance

-

-

0.2

K/W

rise time

-

25

50

ns

fall time

-

6

25

ns

pulse droop

-

0.1

0.5

dB

spurious

-

-

−60

dBc

heatsink temperature

−55 -

+70

°C