Electronic Components Datasheet Search |
|
QM3014M3 Datasheet(PDF) 2 Page - uPI Group Inc. |
|
QM3014M3 Datasheet(HTML) 2 Page - uPI Group Inc. |
2 / 4 page 2 QM3014M3 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0232 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=15A --- 10 12 mΩ VGS=4.5V , ID=10A --- 15 18 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.08 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.1 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 9.8 13.7 nC Qgs Gate-Source Charge --- 4.2 5.88 Qgd Gate-Drain Charge --- 3.6 5.0 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 4 8.0 ns Tr Rise Time --- 8 14 Td(off) Turn-Off Delay Time --- 31 62 Tf Fall Time --- 4 8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 940 1316 pF Coss Output Capacitance --- 131 183 Crss Reverse Transfer Capacitance --- 109 153 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=15A 24.6 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 37 A ISM Pulsed Source Current 2,6 --- --- 111 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 8.5 --- nS Qrr Reverse Recovery Charge --- 2.2 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics |
Similar Part No. - QM3014M3 |
|
Similar Description - QM3014M3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |