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IRF200S234 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF200S234 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF200S234 · FEATURES · With TO-263( D2PAK ) packaging · High speed switching · Low gate input resistance · Standard level gate drive · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;Tc=25℃ Tc=100℃ 90 61 A IDM Drain Current-Single Pulsed 312 A PD Total Dissipation 417 W Tj Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.36 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
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