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CWP8 Datasheet(PDF) 2 Page - IXYS Corporation

Part # CWP8
Description  Rectifier Diodes & FRED
Download  22 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

CWP8 Datasheet(HTML) 2 Page - IXYS Corporation

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© 2004 IXYS All rights reserved
Symbols and Definitions
C
ies
Input capacitance of IGBT
C
iss
Input capacitance of MOSFET
-di/dt
Rate of decrease of forward current
I
C
DC collector current
I
D
Drain current
I
F
Forward current of diode
I
F(AV)M
Maximum average forward current at specified T
h
I
FSM
Peak one cycle surge forward current
I
GT
Gate trigger current
I
R
Reverse current
I
RM
Maximum peak recovery current
I
T
Forward current of thyristor
I
T(AV)M
Maximum average on-state current of a thyristor
at specified T
h
I
TSM
Maximum surge current of a thyristor
R
DS(on)
Static drain-source on-state resistance
R
thjc
Thermal resistance junction to case
r
T
Slope resistance of a thyristor or diode
(for power loss calculations)
T
case
Case temperature
T
h
Heatsink temperature
t
fi
Current fall time with inductive load
T
j,
T
(vj)
Junction temperature
T
jm,
T
(vj)m
Maximum junction temperature
t
rr
Reverse recovery time of a diode
V
CE(sat)
Collector-emitter saturation voltage
V
CES
Maximum collector-emitter voltage
V
DRM
Maximum repetitive forward blocking
voltage of thyristor
V
DSS
Drain-source break-down voltage
V
F
Forward voltage of diode
V
R
Reverse voltage
V
RRM
Maximum peak reverse voltage of thyristor or
diode
V
T
On-state voltage of thyristor
V
T0
Threshold voltage of thyristors or diodes (for
power loss calculation only)
Chip and DCB Ceramic Substrates Data book
Edition 2004
Published by IXYS Semiconductor GmbH
Marketing Communications
Edisonstraße 15, D-68623 Lampertheim
© IXYS Semiconductor GmbH
All Rights reserved
As far as patents or other rights of third parties are concerned, liability is only
assumed for chips and DCB parts per se, not for applications, processes and
circuits implemented with components or assemblies. Terms of delivery and the
right to change design or specifications are reserved.
Nomenclature
IGBT and MOSFET Discrete
IXSD 40N60A
(Example)
IX
IXYS
Die technology
E
NPT3 IGBT
F
HiPerFETTM Power MOSFET
G
Fast IGBT
S
IGBT with SCSOA capability
T
Standard Power MOSFET
D
Unassembled chip (die)
40
Current rating, 40 = 40 A
N
N-channel type
P
P-channel type
60
Voltage class, 60 = 600 V
xx
MOSFET
A
Prime RDS(on) for standard MOSFET
Q
Low gate charge die
Q2
Low gate charge die, 2nd generation
P
PolarHTTM Power MOSFET
L
Linear Mode MOSFET
IGBT
--
No letter, low VCE(sat)
A
Or A2, std speed type
B
Or B2, high speed type
C
Or C2, very high speed type
W-CWP 55-12/18
(Thyristor Example)
W
Package type
C
Chip function
C = Silicon phase control thyristor
W
Unassembled chip
P
Process designator
P = Planar passivated chip
cathode on top
55
Current rating value of one chip in A
12/18
Voltage class, 12/18 = 1200 up to 1800 V
Diode and Thyristor Chips
C-DWEP 69-12
(Diode Example)
C
Package type
D
Chip function
D = Silicon rectifier diode
W
Unassembled chip
EP
Process designator
EP = Epitaxial rectifier diode
N
= Rectifier diode, cathode on top
P
= Rectifier diode, anode on top
FN = Fast Rectifier diode, cathode on top
FP = Fast Rectifier diode, anode on top
69
Current rating value of one chip in A
-12
Voltage class, 12 = 1200 V
Registration No.:
001947 TS2/765/17557
Registration No.:
001947
Chip-Shortform2004.pmd
26.10.2004, 12:44
2


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