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UMF22N Datasheet(PDF) 2 Page - Rohm |
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UMF22N Datasheet(HTML) 2 Page - Rohm |
2 / 5 page EMF22 / UMF22N Transistors 2/4 Absolute maximum ratings (Ta=25 °C) Tr1 Parameter ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 500 150(TOTAL) 150 −55~+150 1.0 ∗1 ∗2 Unit V V V mA A mW °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature DTr2 Parameter ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Symbol VCC VIN IC IO PC Tj Tstg Limits 50 −10~+40 100 50 150(TOTAL) 150 −55~+150 ∗1 ∗2 Unit V V mA mA mW °C °C Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Electrical characteristics (Ta=25 °C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions VCB =10V, IE=0mA, f=1MHz Transition frequency fT − 320 − MHz VCE =2V, IE=−10mA, f=100MHz BVCEO 12 −− V IC =1mA Collector-emitter breakdown voltage BVCBO 15 −− V IC =10µA Collector-base breakdown voltage BVEBO 6 −− V IE =10µA Emitter-base breakdown voltage ICBO −− 100 nA VCB =15V Collector cut-off current IEBO −− 100 nA VEB =6V Emitter cut-off current VCE(sat) − 90 250 mV IC =200mA, IB=10mA Collector-emitter saturation voltage hFE 270 − 680 − VCE =2V, IC=10mA DC current gain Cob − 7.5 − pF Collector output capacitance DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions ∗ fT − 10 13 7 − MHz VCE =10V, IE=−5mA, f=100MHz VI(off) −− 0.5 V VCC =5V, IO=100µA VI(on) 3 −− VO =0.3V, IO=10mA VO(on) − 0.1 0.3 V IO/II =10mA/0.5mA II −− 0.88 mA VI =5V IO(off) −− 0.5 µAVCC=50V, VI=0V R1 1 k Ω − GI 30 −− − VO =5V, IO=5mA − R2/R1 0.8 250 1.2 − Transition frequency ∗Transition frequency of the device Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio |
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