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0
1
2
3
4
On state voltage V
T ( V )
Maximum Transient Thermal Impedence
0
0.2
0.4
0.6
0.8
1.0
On state current (
Α )
On State Characteristics
25
50
75
100
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
10
Normalized to
V
AK = 50V
R
GK =10kΩ
T
A = 25 °C
R
GK =300Ω
10k
Ω
27k
Ω
56k
Ω
1k
Ω
0.001
0.01
0.1
1 2 4 10
100
Time (seconds)
Off State Forward Current vs.
Ambient Temperature
Ambient temperature T
A ( °C )
0
25
50
75
100
Normalized to
V
AK = 50V
T
A = 25 °C
On State Current vs. Maximum
Allowable Temperature
10
100
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20
0
20 40 60
80 100 120
Ambient temperature T
A ( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Junction to ambient
1
2
4
10
20
40
100
200
400
1000
V
AK = 400V
V
AK = 50V
20
40
100
200
400
1000
4000
10000
2000
V
AK = 200V
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1.
2.
4.
3.
20
30
40
50
60
70
80
90
R
GK =300Ω
10k
Ω
27k
Ω
56k
Ω
1k
Ω
0.1
1
10
40
100
4
0.4
400
1000
Ambient temperature T
A ( °C )
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
5/12/00
DB91039-AAS/A3
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