3SK131 datasheet(2/8 Pages) NEC

Part #	3SK131

Description	MOS FIELD EFFECT TRANSISTOR

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3SK131

TYPICAL CHARACTERISTICS (TA = 25

C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Ta-Ambient Temperature-

°C

50

75

100

125

25

0

100

400

300

200

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS-Drain to Source Voltage-V

10

0

10

20

VG2 = 3.0 V

VG1S = 0 V

−0.1

−0.2

−0.3

−0.4

−0.5

1 V

VG2S = 0

−0.6

DRAIN CURRENT vs.

GATE1 TO SOURCE VOLTAGE

VG1S-Gate 1 to Source Voltage-V

0

−1.0

+1.0

10

20

FORWARD TRANSFER ADMITTANCE vs.

GATE1 TO SOURCE VOLTAGE

VG1S-Gate 1 to Source Voltage-V

0

1.0

−1.0

0

10

20

30

40

VDS = 6 V

VG2S = 5 V

4 V

3 V

2 V

1 V

0 V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID-Drain Current-mA

10

20

0

15

10

5

30

25

20

INPUT CAPACITANCE vs.

GATE2 TO SOURCE VOLTAGE

VG2S-Gate 2 to Source Voltage-V

0

1.0

2.0

3.0

4.0

−1.0

0

6.0

4.0

2.0

8.0

VDS = 6.0 V

f = 1 MHz

VDS = 6 V

VG2 = 3 V

f = 1.0 kHz

VG1S = 0.05 V

20

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