QS5U26

Transistor

1/3

Small switching (

−20V, −1.5A)

QS5U26

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!

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!Features

1) The QS5U26 conbines Pch Treueh MOSFET with a

Schottky barrier diode in a single TSMT5 package.

2) Pch Treueh MOSFET have a low on-state resisternce

with a fast switching.

3) Pch Treueh MOSFET is neucted a low voltage drive

(2.5V).

4) The independently connected Schottky barrier diode

have a low forward voltage.

!Applications

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!

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!External dimensions (Units : mm)

TSMT5

Each lead has same dimensions

Abbreviated symbol : U26

2.8

1.6

0.3~0.6

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

load switch, DC/DC conversion

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!

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!Structure

•Silicon P-channel MOS FET

•Schottky Barrier DIODE

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!

!

!Packaging specifications

QS5U26

TR

3000

Type

Package

Code

Taping

Basic ordering unit (pieces)

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!

!

!Equivalent circuit

∗ A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗2

∗1 ESD protection diode

∗2 Body diode

∗1

(1)

(2)

(3)

(5)

(4)

!

!

!

!Absolute maximum ratings (Ta=25

°C)

∗1

∗1

∗3

∗2

Parameter

V

Symbol

−20

V

±12

A

±1.5

A

±6.0

A

−0.75

A

−3.0

°C

Tch

150

V

30

V

20

A

0.5

A

2.0

°C

Tj

125

W/TOTAL

1.0

°C

Tstg

−40~+125

Limits

Unit

Parameter

Symbol

Limits

Unit

Parameter

Symbol

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body diode)

Channel temperature

Repetitive peak reverse voltage

Reverse voltage

Forward current

Forward current surge peak

Junction temperature

Total power dissipatino

Range of strage temperature

Continuous

Pulsed

Continuous

Pulsed