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BUK7207-30B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7207-30B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page Philips Semiconductors BUK7207-30B TrenchMOS™ standard level FET Product data Rev. 02 — 22 January 2004 8 of 12 9397 750 12227 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. VGS =0V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03nk82 0 25 50 75 100 02 46 8 VGS (V) ID (A) Tj = 185 °C Tj = 25 °C 03nk80 0 2 4 6 8 10 0 1020 3040 QG (nC) VGS (V) VDD = 14 V VDD = 24 V 03nk79 0 25 50 75 100 0.0 0.3 0.6 0.9 1.2 VSD (V) IS (A) Tj = 185 °C Tj = 25 °C |
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