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2SK3669 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3669 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3669 2003-03-12 5 Pulse width tw (S) rth – tw Drain-source voltage VDS (V) Safe operating area 0.1 0.01 10 m 100 m 3 1 m 10 m 100 m 1 10 0.003 Single pulse 0.2 0.1 0.05 0.02 0.01 Duty = 0.5 T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W 1 Channel temperature (initial) Tch (°C) EAS – Tch RG = 25 W VDD = 50 V, L = 3.44 mH ÷ ÷ ø ö ç ç è æ - × × × = VDD BVDSS BVDSS AS 2 I L 2 1 Ε Waveform IAR BVDSS VDD VDS Test circuit -15 V 15 V 300 240 180 120 60 0 25 50 75 100 125 150 0.01 0.3 1 3 100 300 0.03 0.05 0.1 0.3 0.5 1 3 5 10 100 0.1 10 30 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max 100 ms* 1 ms* 10 ms* ID max (pulsed)* ID max (continuous) |
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