IS65C1024AL-45QA3 datasheet(3/11 Pages) ISSI

Part #	IS65C1024AL-45QA3

Description	128K x 8 LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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3 / 11 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. C

01/24/05

ISSI®

IS62C1024AL

IS65C1024AL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

TSTG

Storage Temperature

–65 to +125

°C

PT

Power Dissipation

1.0

W

IOUT

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Options

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –1.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 2.1 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VDD + 0.5

V

VIL

Input LOW Voltage(1)

-0.5

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

-1

1

µA

Ind.

-2

2

Auto.

-5

5

ILO

Output Leakage

GND

≤ VOUT ≤ VDD

Com.

-1

1

µA

CE1 = VIH, or

Ind.

-2

2

CE2 = VIL, or

OE = VIH or

Auto.

-5

5

WE = VIL

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