IRHLF670Z4

Pre-Irradiation

2

www.irf.com

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.6*

ISM

Pulse Source Current (Body Diode) ➀

—

—

6.4

VSD

Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

100

ns

Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

150

nC

VDD ≤ 25V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

60

—

—

V

VGS = 0V, ID = 250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.08

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.50

Ω

VGS = 4.5V, ID = 1.0A

Resistance

VGS(th)

Gate Threshold Voltage

1.0

—

2.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.1

—

—

S ( )

VDS = 10V, IDS = 1.0A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

1.0

VDS= 48V ,VGS= 0V

——

10

VDS = 48V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 10V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -10V

Qg

Total Gate Charge

—

—

3.6

VGS = 5.0V, ID = 1.6A

Qgs

Gate-to-Source Charge

—

—

1.5

nC

VDS = 30V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

1.8

Turn-On Delay Time

—

—

8.0

VDD = 30V, ID = 1.6A,

tr

Rise Time

—

—

20

VGS = 5.0V, RG = 24Ω

Turn-Off Delay Time

—

—

20

tf

Fall Time

—

—

15

LS + LD

Total Inductance

—

7.0

—

Measured from Drain lead (6mm /0.25in

from package) to Source lead(6mm/0.25in

from packge)with Source wire internally

bonded from Source pin to Drain pad

Ciss

Input Capacitance

—

152

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

39

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

1.6

—

nA

➃

nH

ns

µA

Rg

Gate Resistance

—

14

—

Ω

f = 5.0MHz, open drain

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

25

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4