Transistors

1

Publication date: November 2002

SJC00059BED

Silicon PNP epitaxial planar type

For low-frequency output amplification

Complementary to 2SD1051

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Large collctor power dissipation P

C

• M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

Note) The part number in the parenthesis shows conventional part number.

Rank

Q

R

80 to 160

120 to 220

Unit: mm

1: Base

2: Collector

3: Emitter

M-A1 Package

(1.0)

(1.5)

(0.85)

(2.5)

(2.5)

21

3

R 0.7

R 0.9

(1.5)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−40

V

Emitter-base voltage (Collector open)

−5V

Collector current

−1.5

A

Peak collector current

−3A

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−40

V

Collector-base cutoff current (Emitter open)

= −20 V, I

E

= 0

−1

µA

Collector-emitter cutoff current (Base open)

−100

µA

Emitter-base cutoff current (Collector open)

−10

µA

1, 2

= −5 V, I

C

= −1 A

80

220



1

−1V

1

−1.5

V

Transition frequency

= −5 V, I

E

= 0.5 A, f = 200 MHz

150

MHz

Collector output capacitance

45

pF

(Common base, input open circuited)

thickness of 1.7 mm for the collector portion