WS6264LLP datasheet(6/13 Pages) ETC1

Part #	WS6264LLP

Description	High Speed Super Low Power SRAM

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Manufacturer	ETC1 [List of Unclassifed Manufacturers]

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6 / 13 page

Rev. 1.0

6

DATA RETENTION CHARACTERISTICS ( TA = 0o ~70oC, Vcc = 5.0V) )

Name

Parameter

Test Condition

MIN TYP(1) MAX

Unit

VDR

VCC for Data Retention

/CE1 ≧ VCC-0.2V, VIN ≧

VCC-0.2V or VIN≦0.2V

2.0

V

ICCDR

Data Retention Current

/CE1≧VCC-0.2V, VIN≧

VCC-0.2V or VIN≦0.2V

0.5

5

uA

TCDR

Chip Deselect to Data

Retention Time

0

ns

tR

Operation Recovery Time

Refer to

Retention Waveform

tRC (2)

ns

1.TA = 25

oC

2. tRC= .Read Cycle Time

LOW Vcc DATA RETENTION WAVEFORM(1) ( /CE1 Controlled )

Data Retention Mode

CE1

V

tCDR

tR

IH

VIH

DR

V > 2.0V

VCC

CE1

>

- 0.2V

CC

V

High Speed Super Low Power SRAM

8K-Word By 8 Bit

WS6264

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