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2N6488 Datasheet(PDF) 4 Page - ON Semiconductor |
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2N6488 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page 2N6487 2N6488 2N6490 2N6491 http://onsemi.com 4 Figure 2. Switching Time Test Circuit 1000 Figure 3. Turn–On Time IC, COLLECTOR CURRENT (AMP) 500 50 20 0.2 20 TC = 25°C VCC = 30 V IC/IB = 10 10 1.0 5.0 tr 0.5 2.0 10 200 100 td @ VBE(off) [ 5.0 V NPN PNP + 10 V 0 SCOPE RB - 4 V tr, tf v 10 ns DUTY CYCLE = 1.0% RC D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA 25 µs - 10 V D1 51 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. VCC + 30 V Figure 4. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 ZθJC (t) = r(t) RθJC RθJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.02 0.01 SINGLE PULSE 0.1 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 20 Figure 5. Active–Region Safe Operating Area 2.0 10 20 80 TJ = 150°C 0.2 5.0 0.5 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 40 1.0 0.1 dc 2.0 60 4.0 2N6487, 2N6490 2N6488, 2N6491 CURVES APPLY BELOW RATED VCEO 5.0 ms 1.0 ms 500 µs 100 µs There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown |
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