2N6487 2N6488 2N6490 2N6491

http://onsemi.com

4

Figure 2. Switching Time Test Circuit

1000

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

500

50

20

0.2

20

TC = 25°C

VCC = 30 V

IC/IB = 10

10

1.0

5.0

tr

0.5

2.0

10

200

100

td @ VBE(off) [ 5.0 V

NPN

PNP

+ 10 V

0

SCOPE

RB

- 4 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25 µs

- 10 V

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

FOR PNP, REVERSE ALL POLARITIES.

VCC

+ 30 V

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

ZθJC (t) = r(t) RθJC

RθJC = 1.67°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

20

Figure 5. Active–Region Safe Operating Area

2.0

10

20

80

TJ = 150°C

0.2

5.0

0.5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

40

1.0

0.1

dc

2.0

60

4.0

2N6487, 2N6490

2N6488, 2N6491

CURVES APPLY BELOW RATED VCEO

5.0 ms

1.0 ms

500 µs

100 µs

There are two limitations on the power handling ability of

a transistors average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown