2N6387 datasheet(3/8 Pages) ONSEMI

Part #	2N6387

Description	Plastic Medium-Power Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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2N6387 2N6388

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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

2N6387

2N6388

VCEO(sus)

60

80

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

2N6387

(VCE = 80 Vdc, IB = 0)

2N6388

ICEO

—

1.0

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

2N6387

(VCE – 80 Vdc, VEB(off) = 1.5 Vdc)

2N6388

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

2N6387

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

2N6388

ICEX

—

300

3.0

µAdc

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

5.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc)

2N6387, 2N6388

(IC = 1 0 Adc, VCE = 3.0 Vdc)

2N6387, 2N6388

hFE

1000

100

20,000

—

Collector–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.01 Adc)

2N6387, 2N6388

(IC = 10 Adc, IB = 0.1 Adc)

2N6387, 2N6388

VCE(sat)

—

2.0

3.0

Vdc

Base–Emitter On Voltage

(IC = 5.0 Adc, VCE = 3.0 Vdc)

2N6387, 2N6388

(IC = 10 Adc, VCE = 3.0 Vdc)

2N6387, 2N6388

VBE(on)

—

2.8

4.5

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

|hfe|

20

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

200

pF

Small–Signal Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

hfe

1000

—

*Indicates JEDEC Registered Data

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

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