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2N5686 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N5686 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page 2N5684 2N5686 http://onsemi.com 2 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 2) (IC = 0.2 Adc, IB = 0) VCEO(sus) 80 – Vdc Collector Cutoff Current (VCE = 40 Vdc, IB = 0) ICEO – 1.0 mAdc Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX – – 2.0 10 mAdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO – 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO – 5.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) hFE 15 5.0 60 – – Collector–Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) – – 1.0 5.0 Vdc Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) – 2.0 Vdc Base–Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) VBE(on) – 2.0 Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.0 – MHz Output Capacitance 2N5684 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5686 Cob – – 2000 1200 pF Small–Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 15 – *Indicates JEDEC Registered Data. Note 2: Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. Figure 2. Switching Time Test Circuit 1.0 0.5 Figure 3. Turn–On Time IC, COLLECTOR CURRENT (AMP) 0.7 0.5 0.2 0.07 0.05 0.02 0.01 0.7 1.0 2.0 3.0 5.0 7.0 10 50 TJ = 25°C IC/IB = 10 VCC = 30 V 0.03 0.3 30 0.1 20 2N5684 (PNP) 2N5686 (NPN) tr td +2.0 V 0 tr ≤ 20ns -12V 10 to 100 µs DUTY CYCLE ≈ 2.0% RB RL VCC -30 V TO SCOPE tr ≤ 20 ns VCC -30 V TO SCOPE tr ≤ 20 ns RL RB +10V 0 -12V 10 to 100 µs DUTY CYCLE ≈ 2.0% tr ≤ 20ns VBB +4.0 V FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. |
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