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TGF2021-01 Datasheet(PDF) 8 Page - TriQuint Semiconductor

Part # TGF2021-01
Description  DC-12 GHz Discrete Power pHEMT
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGF2021-01 Datasheet(HTML) 8 Page - TriQuint Semiconductor

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Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
8
TGF2021-01
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use flux
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
°C.
Assembly Process Notes


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