SSM4226GM datasheet(3/4 Pages) SST

Part #	SSM4226GM

Description	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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Manufacturer	SST [Silicon Storage Technology, Inc]

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SSM4226M/GM

8/06/2004 Rev.1.02

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance

vs. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage

Reverse Diode

vs. Junction Temperature

0

7

14

21

28

35

01

12

23

V DS , Drain-to-Source Voltage (V)

T A =150

o C

10V

5.0V

4.0V

V G =3.0V

0

7

14

21

28

35

01

12

23

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10V

5.0V

4.0V

V G =3.0V

0.6

0.8

1

1.2

1.4

1.6

1.8

-50

0

50

100

150

T j , Junction Temperature (

o C)

I D =6A

V GS =10V

0

20

40

60

80

2

4

6

8

10

12

V GS , Gate-to-Source Voltage (V)

I D =6.0A

T A =25°C

0.1

1

10

0

0.4

0.8

1.2

1.6

V SD ,Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

1.00

1.25

1.50

1.75

2.00

2.25

2.50

-50

0

50

100

150

T j , Junction Temperature (

o C )

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