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2N5401 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N5401 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N5401 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) 2N5400 2N5401 V(BR)CEO 150 − Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) 2N5400 2N5401 V(BR)CBO 160 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 120 Vdc, IE = 0) 2N5401 (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401 ICBO − − 50 50 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 50 nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 50 60 50 − 240 − − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) − − 0.2 0.5 Vdc Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − − 1.0 1.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 300 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 200 − Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 8.0 dB 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package Shipping† 2N5401 TO−92 5000 Unit / Bulk 2N5401RL1 TO−92 2000 Tape & Reel 2N5401RLRA TO−92 2000 Tape & Reel 2N5401RLRAG TO−92 (Pb−Free) 2000 Tape & Reel 2N5401RLRM TO−92 2000 Tape & Ammo Box 2N5401ZL1 TO−92 2000 Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica- tions Brochure, BRD8011/D. |
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