© Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 0

1

Publication Order Number:

2N3906/D

2N3906

Preferred Device

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

40

Vdc

Collector–Base Voltage

VCBO

40

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector Current – Continuous

IC

200

mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Power Dissipation

@ TA = 60°C

PD

250

mW

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to

+150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction to Ambient

R

θJA

200

°C/W

Thermal Resistance,

Junction to Case

R

θJC

83.3

°C/W

1. Indicates Data in addition to JEDEC Requirements.

Device

Package

Shipping

ORDERING INFORMATION

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

3

2

BASE

1

EMITTER

2N3906

TO–92

5000 Units/Box

2N3906RLRA

TO–92

2000/Tape & Reel

2N3906RLRE

TO–92

2000/Tape & Reel

2N3906RLRM

TO–92

2000/Ammo Pack

STYLE 1

2N3906RLRP

TO–92

2000/Ammo Pack

TO–92

CASE 29

STYLE 1

3

2

1

Y

= Year

WW

= Work Week

MARKING DIAGRAMS

2N

3906

YWW

2N3906RL1

TO–92

2000/Tape & Reel

2N3906ZL1

TO–92

2000/Ammo Pack