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SM2G54 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # SM2G54
Description  AC POWER CONTROL APPLICATIONS
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SM2G54 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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SM2G54,SM2L54
2004-07-15
1
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR
SILICON PLANAR TYPE
SM2G54,SM2L54
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off−State Voltage : VDRM = 800V
R.M.S. On−State Current
: IT (RMS) = 2A
High Commutation (dv / dt)
: (dv / dt) c = 5V / µs (Min.)
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off−State Voltage
VDRM
800
V
R.M.S. On−State Current
(Full Sine Waveform)
IT (RMS)
2
A
8 (50Hz)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
ITSM
8.8 (60Hz)
A
I
2
t Limit Value
I
2
t
0.32
A
2
s
Critical Rate of Rise of On−State
Current
(Note)
di / dt
50
A / µs
Peak Gate Power Dissipation
PGM
3
W
Average Gate Power Dissipation
PG (AV)
0.3
W
Peak Gate Voltage
VFGM
10
V
Peak Gate Current
IGM
1.6
A
Junction Temperature
Tj
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Note:
di / dt test condition
VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
Unit: mm
JEDEC
−
JEITA
−
TOSHIBA
−
Weight: 0.82g
1 : T1
2 : T2
3 : GATE


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