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MT49H32M9CFM-XX Datasheet(PDF) 1 Page - Micron Technology

Part # MT49H32M9CFM-XX
Description  288Mb SIO REDUCED LATENCY(RLDRAM II)
Download  44 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT49H32M9CFM-XX Datasheet(HTML) 1 Page - Micron Technology

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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
pdf: 09005aef80a41b59/zip: 09005aef811ba111
MT49H8M18C_1.fm - Rev. F 11/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
16 MEG x 18, 32 MEG x 9
2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II
288Mb SIO REDUCED
LATENCY (RLDRAM II)
MT49H16M18C
MT49H32M9C
Features
• 288Mb
• 400 MHz DDR operation (800 Mb/s/pin data rate)
• Organization
• 16 Meg x 18, 32 Meg x 9 Separate I/O
•8 banks
• Cyclic bank switching for maximum bandwidth
• Reduced cycle time (20ns at 400 MHz)
• Nonmultiplexed addresses (address multiplexing
option available)
• SRAM-type interface
• Read latency (RL), row cycle time, and burst
sequence length
• Balanced READ and WRITE latencies in order to
optimize data bus utilization
• Data mask for WRITE commands
• Differential input clocks (CK, CK#)
• Differential input data clocks (DKx, DKx#)
• On-chip DLL generates CK edge-aligned data and
output data clock signals
• Data valid signal (QVLD)
• 32ms refresh (8K refresh for each bank; 64k refresh
command must be issued in total each 32ms)
• 144-ball FBGA package
• HSTL I/O (1.5V or 1.8V nominal)
•25Ω–60Ω matched impedance outputs
• 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
• On-die termination (ODT) RTT
NOTE:
1. Contact Micron for availability of lead-free
products.
Options
Marking
• Clock Cycle Timing
2.5ns (400 MHz)
3.3ns (300 MHz)
5ns (200 MHz)
-25
-33
-5
•Configuration
16 Meg x 18
32 Meg x 9
MT49H16M18CFM
MT49H32M9CFM
•Package
144-ball FBGA
(11mm x 18.5mm)
FM
BM (lead-free)1
Table 1:
Valid Part Numbers
PART NUMBER
DESCRIPTION
MT49H16M18CFM-xx
16 Meg x 18 RLDRAM II
MT49H32M9CFM-xx
32 Meg x 9 RLDRAM II
Figure 1: 144-Ball FBGA


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