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110RIA80 Datasheet(PDF) 3 Page - International Rectifier |
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110RIA80 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page 110/111RIA Series 3 Bulletin I25204 rev. B 09/03 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage I RRM Max. peak reverse and off-state I DRM leakage current Blocking 500 V/µs T J = TJ max. linear to 80% rated VDRM Parameter 110/111RIA Units Conditions 20 mA T J = TJ max, rated VDRM/VRRM applied P GM Maximum peak gate power 12 T J = TJ max, t p ≤ 5ms P G(AV) Maximum average gate power 3.0 T J = TJ max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A T J = TJ max, t p ≤ 5ms +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage I GT DC gate current requiredT J = - 40°C to trigger mA T J = 25°C T J = 140°C V GT DC gate voltage requiredT J = - 40°C to trigger V T J = 25°C T J = 140°C I GD DC gate current not to trigger 6.0 mA Parameter 110/111RIA Units Conditions 20 10 Triggering T J = TJ max TYP. MAX. 180 - 80 120 40 - 2.5 - 1.6 2 1- Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W VT J = TJ max, t p ≤ 5ms T J Max. operating temperature range -40 to 140 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% 15.5 Non lubricated threads (137) 14 Lubricated threads (120) wt Approximate weight 130 g Parameter 110/111RIA Units Conditions 0.27 DC operation 0.1 Mounting surface, smooth, flat and greased Thermal and Mechanical Specification °C K/W Nm (lbf-in) Case style TO - 209AC (TO-94) See Outline Table V GD DC gate voltage not to trigger 0.25 V |
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