30

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Nov. 2002

FEATURES

High power and current handling capability.

TO-220 & TO-263 package.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V

Gate-Source Voltage

20

V

-Pulsed

20

A

60

A

Drain-Source Diode Forward Current

20

A

Maximum Power Dissipation

W

Operating and Storage Temperature Range

-65 to 175

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

3.5

62.5

C/W

Ω

Ω

CEP21A3/CEB21A3

@Tc=25 C

Derate above 25 C

43

0.29

W/ C

Drain Current-Continuous

S

G

D

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

G

S

S

D

D

G

4-167

4

C/W

4