CEP21A3 datasheet(2/5 Pages) CET

Part #	CEP21A3

Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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CEP21A3/CEB21A3

ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID=250

µA

30

V

Zero Gate Voltage Drain Current

IDSS

VDS = 30V, VGS =0V

1

µA

Gate-Body Leakage

IGSS

VGS =20V, VDS =0V

100

nA

ON CHARACTERISTICS

a

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = 250

µA

0.8

2.5

V

Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =12A

36

45

m

Ω

VGS = 4.5V, ID =15A

55

70

m

Ω

On-State Drain Current

ID(ON)

VDS = 10V, VGS =10V

20

A

S

Forward Transconductance

FS

g

VDS = 10V, ID =12A

DYNAMIC CHARACTERISTICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

Reverse Transfer Capacitance

VDS =15V, VGS =0V

f =1.0MHZ

364

P

F

197

P

F

P

F

62

SWITCHING CHARACTERISTICS

b

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD =15V,

ID =12A

VGS = 10V,

RGEN =2.5

Ω

12

25

ns

5

15

14

30

14

30

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

nC

C

Fall Time

4-168

4

10

2

3

15

VDS = 15V,ID =6A

VGS = 10V

4

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