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IRG4BH20K-L Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BH20K-L Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4BH20K-L 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 28 43 IC = 5.0A Qge Gate - Emitter Charge (turn-on) — 4.4 6.6 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 12 18 VGE = 15V td(on) Turn-On Delay Time — 23 — tr Rise Time — 26 — TJ = 25°C td(off) Turn-Off Delay Time — 93 140 IC =5.0A, VCC = 960V tf Fall Time — 270 400 VGE = 15V, RG = 50Ω Eon Turn-On Switching Loss — 0.45 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.44 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 0.89 1.2 tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω td(on) Turn-On Delay Time — 23 — TJ = 150°C, tr Rise Time — 28 — IC = 5.0A, VCC = 960V td(off) Turn-Off Delay Time — 100 — VGE = 15V, RG = 50Ω tf Fall Time — 620 — Energy losses include "tail" Ets Total Switching Loss — 1.7 — mJ See Fig. 10,11,14 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 435 — VGE = 0V Coes Output Capacitance — 44 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 8.3 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — V/°C VGE = 0V, IC = 2.5mA — 3.17 4.3 IC = 5.0A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — IC = 11A See Fig.2, 5 — 2.84 — IC = 5.0A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.5 — 6.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 1mA gfe Forward Transconductance 2.3 3.5 — S VCE = 100 V, IC = 5.0A — — 250 VGE = 0V, VCE = 1200V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, (See fig. 13a) * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. |
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