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IFN6450 Datasheet(PDF) 1 Page - InterFET Corporation |
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IFN6450 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor ¥ High Voltage Absolute maximum ratings at TA = 25¡C IFN6449 IFN6450 Reverse Gate Source Voltage – 100 V – 100 V Reverse Gate Drain Voltage – 300 V – 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derating 6.4 mW/°C 6.4 mW/°C TOÐ39 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case At 25°C free air temperature: IFN6449 IFN6450 Process NJ42 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Drain Breakdown Voltage V(BR)GDO – 300 – 200 V IG = – 10 µA, IS = ØA Gate Source Breakdown Voltage V(BR)GSO – 100 – 100 V IG = – 10 µA, ID = ØA Gate Reverse Current IGSS – 100 nA VGS = – 80V, VDS = ØV – 100 µA VGS = – 80V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 2 – 15 – 2 – 15 V VDS = 30V, ID = 4 nA Drain Saturation Current (Pulsed) IDSS 210210 mA VDS = 30V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward |Yfs | 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz Transfer Transmittance Common Source Output Conductance gos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 10 10 pF VDS = 30V, VGS = ØV f = 1 MHz Common Source Crss 55 pF VDS = 30V, VGS = ØV f = 1 MHz Reverse Transfer Capacitance 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-48 |
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