RK4410

Transistors

Switching (30V, 10A)

RK4410

Features

1) Low Qg.

2) Low on-resistance.

3) Exellent resistance to damage from static electricity.

Structure

Silicon N-channel

MOS FET

Equivalent circuit

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Drain

(8) Drain

(1) (2) (3)

(8) (7) (6) (5)

(8) (7) (6) (5)

(1) (2) (3) (4)

(4)

∗

and the source terminals to protect the diode

against static electricity when the product is in

use.Use a protection circuit when the fixed

voltage are exceeded.

External dimensions (Units : mm)

ROHM : SOP8

3.9

1.5

0.15

6.0

Max.1.75

0.5

(1)

(4)

(8)

(5)

Each lead has same dimensions

Absolute maximum ratings (Ta=25

°C)

30

±20

10

40

10

40

1.3

5.2

2

150

−55∼+150

Tch

V

V

A

A

W

˚C

A

A

A

A

Tstg

˚C

Symbol

Limits

Unit

Parameter

∗ Pw≤10ms, Duty cycle≤1%

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Reverse Drain

Current

Source Current

(Body Diode)

Total Power Dissipation(Tc=25˚C)

Channel Temperature

Storage Temperature

Continuous

Pulsed

Continuous

Pulsed

Continuous

Pulsed