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K6R4004C1C-C12 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6R4004C1C-C12 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 8 page K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E CMOS SRAM PRELIMINARY Rev 3.0 - 3 - March 2000 DC AND OPERATING CHARACTERISTICS*(TA=0 to 70 °C, Vcc=5.0V±10%, unless otherwise specified) * The above parameters are also guaranteed at extended and industrial temperature range. ** VCC=5.0V ±5%, Temp.=25°C. Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI VIN=VSS to VCC -2 2 µA Output Leakage Current ILO CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Com. 10ns - 160 mA 12ns - 150 15ns - 140 20ns - 130 Ext. Ind. 10ns - 175 12ns - 165 15ns - 155 20ns - 145 Standby Current ISB Min. Cycle, CS=VIH - 60 mA ISB1 f=0MHz, CS ≥VCC-0.2V, VIN ≥VCC-0.2V or VIN≤0.2V - 10 Output Low Voltage Level VOL IOL=8mA - 0.4 V Output High Voltage Level VOH IOH=-4mA 2.4 - V VOH1** IOH1=-0.1mA - 3.95 V CAPACITANCE*(TA=25 °C, f=1.0MHz) * Capacitance is sampled and not 100% tested. Item Symbol Test Conditions MIN Max Unit Input/Output Capacitance CI/O VI/O=0V - 8 pF Input Capacitance CIN VIN=0V - 7 pF ABSOLUTE MAXIMUM RATINGS* * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to VCC+0.5 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TA 0 to 70 °C Extended TA -25 to 85 °C Industrial TA -40 to 85 °C RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70 °C) * The above parameters are also guaranteed at extended and industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. *** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA. Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.2 - VCC+0.5*** V Input Low Voltage VIL -0.5** - 0.8 V |
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