5

High Speed GaAlAs Infrared Emitter

OPE5585

The OPE5585 is GaAlAs infrared emitting diode

DIMENSIONS(Unit : mm)

that is designed for high power, low forward voltage

and high speed rise / fall time.

This device is optimized for speed and efficiency

at emission wavelength 850nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1-3/4 plastic package

and has narrow beam angle with lensed package

and cup frame. Especially this device is suited

as the emitter of data transmission without cable.

FEATURES

• High speed : 25ns rise time

• 850nm wavelength

• Narrow beam angle

• Low forward voltage

• High power and high reliability

• Available for pulse operating

APPLICATIONS

• Emitter of IrDA

• IR Audio and Telephone

• High speed IR communication

• IR LANs

• Available for wireless digital data transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

Otherwise, it should be keeping in a damp proof box with desiccants.

* Please take proper steps in order to secure reliability and safety in required conditions

and environments for this device.

MAXIMUM RATINGS

(Ta=25

)

Item

Symbol

Rating

Unit

Power Dissipation

150

C

Forward current

100

EC

Pulse forward current

CCCC DC

1.0

A

C

Reverse voltage

4.0

C

Operating temp.

Topr.

-25~ +85

°CC

Tsol.

260.

°CC

ELECTRO-OPTICAL CHARACTERISTICS

(Ta=25

)

Item

Symbol

Conditions

Min.

Typ.

Max.

Unit

Forward voltage

C

EC

1.5

2.0

V

Reverse current

C

CC

C

10

µEC

Capacitance

Ct

f=1

CC

20

C

Radiant intensity

Ie

EC

40

100

C

/

Peak emission wavelength

p

C

EC

C

850

C

C

Spectral bandwidth 50%

C

C

C

45

C

C

Half angle



C

C

±10

C

deg.

Optical rise & fall time(10%~90%)

tr/tf

C

C

25/13

C

ns

Cut off frequency

*3

fc

D ECEEC

DD EC

C

C

14

C

MHz

2- 0.5

2.5

Anode

Cathode

Tolerance :

±0.2mm