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IRHNB3160 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNB3160 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 51 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 32.5 IDM Pulsed Drain Current ➀ 204 PD @ TC = 25°C Max. Power Dissipation 300 W Linear Derating Factor 2.4 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 51 A EAR Repetitive Avalanche Energy ➀ 30 mJ dv/dt Peak Diode Recovery dv/dt ➂ 7.3 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( for 5 sec) Weight 3.5 (Typical ) g Pre-Irradiation International Rectifier’s RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) 12/10/01 www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID IRHNB7160 100K Rads (Si) 0.040 Ω 51A IRHNB3160 300K Rads (Si) 0.040 Ω 51A IRHNB4160 600K Rads (Si) 0.040 Ω 51A IRHNB8160 1000K Rads (Si) 0.040 Ω 51A For footnotes refer to the last page SMD-3 Features: ! Single Event Effect (SEE) Hardened ! Low RDS(on) ! Low Total Gate Charge ! Proton Tolerant ! Simple Drive Requirements ! Ease of Paralleling ! Hermetically Sealed ! Ceramic Package ! Surface Mount ! Light Weight PD - 91795A IRHNB7160 100V, N-CHANNEL RAD Hard ™ HEXFET ® TECHNOLOGY |
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