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PMEG4010EJ Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMEG4010EJ Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 9397 750 14817 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 11 April 2005 5 of 12 Philips Semiconductors PMEGxx10EH/EJ series 1 A very low VF MEGA Schottky barrier rectifiers (1) Tamb = 150 °C (2) Tamb = 125 °C (3) Tamb =85 °C (4) Tamb =25 °C (5) Tamb = −40 °C (1) Tamb = 150 °C (2) Tamb = 125 °C (3) Tamb =85 °C (4) Tamb =25 °C (5) Tamb = −40 °C Fig 1. PMEG2010EH, PMEG2010EJ: Forward current as a function of forward voltage; typical values Fig 2. PMEG2010EH, PMEG2010EJ: Reverse current as a function of reverse voltage; typical values Tamb =25 °C; f = 1 MHz Fig 3. PMEG2010EH, PMEG2010EJ: Diode capacitance as a function of reverse voltage; typical values 006aaa247 1 10−1 102 10 103 IF (mA) 10−2 VF (V) 0 0.5 0.4 0.2 0.3 0.1 (1) (2) (3) (4) (5) 006aaa248 IR ( µA) 1 10−2 10−1 104 103 102 10 105 10−3 VR (V) 020 16 812 4 (1) (2) (3) (4) (5) VR (V) 020 16 812 4 006aaa249 40 80 120 Cd (pF) 0 |
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