Page 1 of 7

Document No. 70-0097-01

│ www.psemi.com

©2005 Peregrine Semiconductor Corp. All rights reserved.

RFCommon

RF1

RF2

CMOS

Control

Driver

CTRL

The PE4231 SPDT High Power UltraCMOS™ RF Switch is

designed to cover a broad range of applications from DC to 1.3

GHz. This single-supply reflective switch integrates on-board

CMOS control logic driven by a simple, single-pin CMOS or

TTL compatible control input. Using a nominal +3-volt power

supply, a typical input 1 dB compression point of +32 dBm can

be achieved. The PE4231 also exhibits input-output isolation of

better than 42 dB at 1.0 GHz and is offered in a small 8-lead

MSOP package.

The PE4231 SPDT High Power UltraCMOS™ RF Switch is

manufactured in Peregrine’s patented Ultra Thin Silicon

(UTSi®) CMOS process, offering the performance of GaAs with

the economy and integration of conventional CMOS.

Product Specification

SPDT High Power UltraCMOS™

DC – 1.3 GHz RF Switch

Product Description

Figure 1. Functional Diagram

PE4231

Features

+32 dBm

Notes:

1. Device linearity will begin to degrade below 1 MHz.

2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.

3. Measured in a 50

Ω system.

Figure 2. Package Type

Parameter

Conditions

Minimum

Typical

Maximum

Units

DC

1300

MHz

Insertion Loss

50 MHz

1000 MHz

0.50

0.80

0.60

0.90

dB

Isolation – RFCommon to

RF1/RF2

50 MHz

1000 MHz

73

40

75

42

dB

Isolation – RF1 to RF2

50 MHz

1000 MHz

58

33

60

35

dB

Return Loss

1000 MHz

16

17

dB

‘ON’ Switching Time

CTRL to 0.1 dB final value, 2 GHz

2000

ns

‘OFF’ Switching Time

CTRL to 25 dB isolation, 2 GHz

900

ns

15

1000 MHz

30

32

dBm

1000 MHz, 17 dBm

50

dBm

8-lead MSOP