FDC655BN datasheet(2/6 Pages) FAIRCHILD

Part #	FDC655BN

Description	Single N-Channel, Logic Level, PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDC655BN Rev. C(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Notes:

1.

RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

a.

78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.

b.

156°C/W when mounted on a minimum pad.

2.

Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = 250 µA30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefﬁcient

ID = 250 µA, Referenced to 25°C23

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = -55°C

1

10

µA

IGSS

Gate–Body Leakage

VGS = ±20 V, VDS = 0 V

±100

nA

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA1

1.9

3

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefﬁcient

ID = 250 µA, Referenced to 25°C– 4.1

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V, ID = 6.3 A

VGS = 4.5 V, ID = 5.5 A

VGS = 10 V, ID = 6.3 A, TJ =125°C

20

26

27

25

33

45

m

Ω

gFS

Forward Transconductance

VDS = 10 V, ID = 6.3 A

20

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

f = 1.0 MHz

570

pF

Coss

Output Capacitance

140

pF

Crss

Reverse Transfer Capacitance

70

pF

RG

Gate Resistance

VGS = 15 mV, f = 1.0 MHz

2.1

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

VDD = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

816

ns

tr

Turn–On Rise Time

48

ns

td(off)

Turn–Off Delay Time

22

35

ns

tf

Turn–Off Fall Time

36

ns

Qg(TOT)

Total Gate Charge at Vgs=10V

VDD = 15 V, ID = 6.3 A,

10

15

nC

Qg(TOT)

Total Gate Charge at Vgs=5V

6

8

nC

Qgs

Gate–Source Charge

1.7

nC

Qgd

Gate–Drain Charge

2.1

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

1.3

A

VSD

Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2)

0.8

1.2

V

trr

Diode Reverse Recovery Time

IF = 6.3 A, dIF/dt = 100 A/µs18

ns

Qrr

Diode Reverse Recovery Charge

9

nC

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