4

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FDC655BN Rev. C(W)

Typical Characteristics

0

2

4

6

8

10

02468

10

12

15V

20V

0

200

400

600

800

05

10

15

20

25

30

f = 1MHz

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

V

DC

10s

1s

100ms

100

µs

R

V

SINGLE PULSE

R

T

10ms

1ms

0

1

2

3

4

5

0.1

1

10

100

1000

SINGLE PULSE

°C/W

°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

°C/W

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

P(pk)