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IRHM4260 Datasheet(PDF) 2 Page - International Rectifier |
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IRHM4260 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page 2 www.irf.com IRHM7260 IRHM7260 IRHM7260 IRHM7260 IRHM7260 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions IS Continuous Source Current (Body Diode) 35* ISM Pulse Source Current (Body Diode) ➀ 140 VSD Diode Forward Voltage 1.8 V Tj = 25°C, IS = 35A, VGS = 0V ➃ trr Reverse Recovery Time 820 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge 8.5 µC VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions RthJC Junction-to-Case 0.50 RthJA Junction-to-Ambient 48 °C/W Typical socket mount RthCS Case-to-Sink 0.21 Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown 0.26 V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.070 Ω VGS = 12V, ID =25A Resistance 0.077 VGS = 12V, ID = 35A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 9.0 S ( )VDS > 15V, IDS = 25A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS= 160V ,VGS=0V 250 VDS = 160V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 290 VGS =12V, ID =35A Qgs Gate-to-Source Charge 42 nC VDS = 100V Qgd Gate-to-Drain (Miller) Charge 120 td(on) Turn-On Delay Time 50 VDD = 100V, ID =35A tr Rise Time 200 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time 200 tf Fall Time 130 LS + LD Total Inductance 6.8 Measured from Drain Lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in from package) with Source wires bonded from Source Pin to Drain Pad Ciss Input Capacitance 5300 VGS = 0V, VDS = 25V Coss Output Capacitance 1200 pF f = 1.0MHz Crss Reverse Transfer Capacitance 360 nA ➃ nH ns µA *Current limited by pin diameter |
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Similar Description - IRHM4260 |
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