Publication Order Number:

NTF3055–160/D

© Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 0

1

NTF3055-160

Preferred Device

Power MOSFET

2.0 Amps, 60 Volts

N–Channel SOT–223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Applications

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–to–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 10 ms)

VGS

± 20

± 30

Vdc

Vpk

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 100°C

– Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

2.0

1.2

6.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1.)

Total Power Dissipation @ TA = 25°C (Note 2.)

Derate above 25

°C

PD

2.1

1.3

0.014

W

W

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

–55 to

175

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc,

IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)

EAS

65

mJ

Thermal Resistance

– Junction to Ambient (Note 1.)

– Junction to Ambient (Note 2.)

R

θJA

R

θJA

72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

1. When surface mounted to an FR4 board using 1

″ pad size,

(Cu. Area 1.127 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in2).

D

G

S

1

2

3

4

2.0 AMPERES

60 VOLTS

RDS(on) = 160 mW

N–Channel

Device

Package

Shipping

ORDERING INFORMATION

NTF3055–160T1

SOT–223

1000 Tape & Reel

SOT–223

CASE 318E

STYLE 3

http://onsemi.com

MARKING

DIAGRAM

5160

5160

= Device Code

L

= Location Code

WW

= Work Week

PIN ASSIGNMENT

3

2

1

4

Gate

Drain Source

Drain

NTF3055–160T3

SOT–223

4000 Tape & Reel

NTF3055–160T3LF

SOT–223

4000 Tape & Reel

LWW