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NTF3055-160 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTF3055-160 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page Publication Order Number: NTF3055–160/D © Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 0 1 NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Gate–to–Source Voltage – Continuous – Non–repetitive (tp ≤ 10 ms) VGS ± 20 ± 30 Vdc Vpk Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp ≤ 10 µs) ID ID IDM 2.0 1.2 6.0 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Derate above 25 °C PD 2.1 1.3 0.014 W W W/ °C Operating and Storage Temperature Range TJ, Tstg –55 to 175 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc) EAS 65 mJ Thermal Resistance – Junction to Ambient (Note 1.) – Junction to Ambient (Note 2.) R θJA R θJA 72.3 114 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C 1. When surface mounted to an FR4 board using 1 ″ pad size, (Cu. Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2–2.4 oz. (Cu. Area 0.272 in2). D G S 1 2 3 4 2.0 AMPERES 60 VOLTS RDS(on) = 160 mW N–Channel Device Package Shipping ORDERING INFORMATION NTF3055–160T1 SOT–223 1000 Tape & Reel SOT–223 CASE 318E STYLE 3 http://onsemi.com MARKING DIAGRAM 5160 5160 = Device Code L = Location Code WW = Work Week PIN ASSIGNMENT 3 2 1 4 Gate Drain Source Drain NTF3055–160T3 SOT–223 4000 Tape & Reel NTF3055–160T3LF SOT–223 4000 Tape & Reel LWW |
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