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SSM01N60J Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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2 / 6 page www.SiliconStandard.com 2 of 6 SSM01N60H,J Electrical Characteristics @ Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V ∆BV DSS/ ∆Τj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.6 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.8A - 7.2 8 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=0.8A - 0.8 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 3 ID=1.6A - 7.7 - nC Qgs Gate-Source Charge VDS=480V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.6 - nC td(on) Turn-on Delay Time 3 VDD=300V - 8 - ns tr Rise Time ID=1.6A - 5 - ns td(off) Turn-off Delay Time RG=10Ω ,VGS=10V - 14 - ns tf Fall Time RD=187.5Ω - 7 - ns Ciss Input Capacitance VGS=0V - 286 - pF Coss Output Capacitance VDS=25V - 25 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 1.6 A ISM Pulsed Source Current ( Body Diode ) 1 - - 6 A VSD Forward On Voltage 3 Tj=25°C, IS=1.6A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 oC , V DD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. ± 30V ±100 Rev.2.02 4/06/2004 |
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